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Kvantovaya Elektronika, 1998, Volume 25, Number 4, Pages 305–307 (Mi qe1226)  

Lasers

Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

V. I. Kozlovskya, P. A. Trubenkob, E. M. Dianovb, Yu. V. Korostelina, Ya. K. Skasyrskya, P. V. Shapkina

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
Abstract: The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of Ee = 40 — 70 keV energy. At T = 80 K for Ee = 65 keV the threshold current density was 60 A cm–2 and the output power was 0.15 W at the 465 nm wavelength. At T = 300 K the lasing (λ = 474 nm) occurred in the ZnSe substrate.
Received: 14.01.1998
English version:
Quantum Electronics, 1998, Volume 28, Issue 4, Pages 294–296
DOI: https://doi.org/10.1070/QE1998v028n04ABEH001226
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 78.66.Fd, 78.66.Hf, 85.30.St
Language: Russian


Citation: V. I. Kozlovsky, P. A. Trubenko, E. M. Dianov, Yu. V. Korostelin, Ya. K. Skasyrsky, P. V. Shapkin, “Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy”, Kvantovaya Elektronika, 25:4 (1998), 305–307 [Quantum Electron., 28:4 (1998), 294–296]
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    Квантовая электроника Quantum Electronics
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