Pulse avalanche photodetector based on a metal-insulator-semiconductor structure

An investigation was made of avalanche multiplication of carriers in the surface region of a metal–insulator–semiconductor (MIS) structure. Transient photocurrents resulting from such multiplication were observed in a surface layer of silicon in an Au–SiO₂–Si structure. The results obtained indicated that avalanche multiplication of carriers in MIS structures could be used for detection of light.