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Kvantovaya Elektronika, 1975, Volume 2, Number 10, Pages 2276–2281 (Mi qe12041)  

This article is cited in 6 scientific papers (total in 6 papers)

Theory of the natural width of a semiconductor laser emission line

V. F. Elesin, V. V. Rusakov
Full-text PDF (671 kB) Citations (6)
Abstract: An investigation is made of the dependence of the width of a line emitted by a single-mode semiconductor laser on the intensity of this line. The line width is calculated allowing for the saturation effect. It is shown that saturation results in an additional broadening of the laser line. In a weak field, when the saturation parameter η is small, the product of the line width and the number of photons increases proportionally to the line intensity. In a strong field (η >> 1), this product becomes constant but its value is considerably greater than the value in a weak field.
Received: 16.05.1975
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 10, Pages 1239–1242
DOI: https://doi.org/10.1070/QE1975v005n10ABEH012041
Document Type: Article
UDC: 621.375.8:535.334
PACS: 42.60.J
Language: Russian


Citation: V. F. Elesin, V. V. Rusakov, “Theory of the natural width of a semiconductor laser emission line”, Kvantovaya Elektronika, 2:10 (1975), 2276–2281 [Sov J Quantum Electron, 5:10 (1975), 1239–1242]
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  • https://www.mathnet.ru/eng/qe/v2/i10/p2276
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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