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Brief Communications
Electron-beam-pumped InAs and PbxSn1–xSe semiconductor lasers
Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin
Abstract:
Sealed electron-beam-pumped InAs and PbxSn1–xSe lasers were constructed. They emitted pulses of 10 W and 20 mW power at wavelengths of 3.04 and 10.6 μ, respectively. Each laser emitted pulses of 100 nsec duration at a repetition frequency of 100 Hz.
Received: 21.01.1976
Citation:
Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin, “Electron-beam-pumped InAs and PbxSn1–xSe semiconductor lasers”, Kvantovaya Elektronika, 3:10 (1976), 2302–2303 [Sov J Quantum Electron, 6:10 (1976), 1257–1258]
Linking options:
https://www.mathnet.ru/eng/qe11974 https://www.mathnet.ru/eng/qe/v3/i10/p2302
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| Abstract page: | 109 | | Full-text PDF : | 59 |
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