Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin, “Electron-beam-pumped InAs and PbxSn1–xSe semiconductor lasers”, Kvantovaya Elektronika, 3:10 (1976), 2302–2303 [Sov J Quantum Electron, 6:10 (1976), 1257

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Kvantovaya Elektronika, 1976, Volume 3, Number 10, Pages 2302–2303 (Mi qe11974)

Brief Communications

Electron-beam-pumped InAs and Pb_xSn_1–xSe semiconductor lasers

Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin

Full-text PDF (491 kB)

Abstract: Sealed electron-beam-pumped InAs and Pb_xSn_1–xSe lasers were constructed. They emitted pulses of 10 W and 20 mW power at wavelengths of 3.04 and 10.6 μ, respectively. Each laser emitted pulses of 100 nsec duration at a repetition frequency of 100 Hz.

Received: 21.01.1976

English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 10, Pages 1257–1258
DOI: https://doi.org/10.1070/QE1976v006n10ABEH011974

Document Type: Article

UDC: 621.378

PACS: 42.60.Jf

Language: Russian

Citation: Yu. A. Akimov, E. B. Bendovskiĭ, A. A. Burov, E. A. Zagarinskiĭ, Yu. V. Klevkov, I. V. Kryukova, V. I. Leskovich, B. M. Stepanov, V. A. Chapnin, “Electron-beam-pumped InAs and Pb_xSn_1–xSe semiconductor lasers”, Kvantovaya Elektronika, 3:10 (1976), 2302–2303 [Sov J Quantum Electron, 6:10 (1976), 1257–1258]

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https://www.mathnet.ru/eng/qe11974

https://www.mathnet.ru/eng/qe/v3/i10/p2302

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