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Kvantovaya Elektronika, 1975, Volume 2, Number 9, Pages 2084–2086 (Mi qe11969)  

This article is cited in 6 scientific papers (total in 6 papers)

Brief Communications

PbSnTe–PbTe heterojunction laser emitting at λ = 10 μ

L. N. Kurbatov, A. D. Britov, S. M. Karavaev, Yu. I. Gorina, G. A. Kalyuzhnaya, P. M. Starik
Full-text PDF (513 kB) Citations (6)
Abstract: An n-PbTe–p-Pb1–xSnxTe heterojunction laser was fabricated by epitaxial growth of PbTe from the vapor phase on a Pb0.83Sn0.17Te substrate. Stimulated emission of the TE modes was obtained at wavelengths of 10.2 μ at 77°K and 12.2 μ at 33°K. Continuous stimulated emission was obtained at liquid helium temperatures.
Received: 26.03.1975
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 9, Pages 1137–1139
DOI: https://doi.org/10.1070/QE1975v005n09ABEH011969
Document Type: Article
UDC: 621.378.35
PACS: 42.60.J
Language: Russian


Citation: L. N. Kurbatov, A. D. Britov, S. M. Karavaev, Yu. I. Gorina, G. A. Kalyuzhnaya, P. M. Starik, “PbSnTe–PbTe heterojunction laser emitting at λ = 10 μ”, Kvantovaya Elektronika, 2:9 (1975), 2084–2086 [Sov J Quantum Electron, 5:9 (1975), 1137–1139]
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  • https://www.mathnet.ru/eng/qe11969
  • https://www.mathnet.ru/eng/qe/v2/i9/p2084
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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