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Kvantovaya Elektronika, 1975, Volume 2, Number 9, Pages 2013–2018 (Mi qe11920)  

This article is cited in 1 scientific paper (total in 1 paper)

Reversible recording of optical information in metal-dielectric-semiconductor structures

I. V. Korobov, A. F. Plotnikov, Yu. M. Popov, V. N. Seleznev
Abstract: An investigation was made of the charging of traps in the dielectric layers of a metal-siliconnitride/ silicon-dioxide-semiconductor structure subjected to electrical pulses. An analysis was made of the methods for optical switching of this structure by laser radiation and for photoelectric reading. The principal energy and time characteristics were determined for an optical memory based on this structure. Organization of an optical reversible memory of 108 bit capacity was considered.
Received: 10.03.1975
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 9, Pages 1092–1095
DOI: https://doi.org/10.1070/QE1975v005n09ABEH011920
Document Type: Article
UDC: 621.378
PACS: 42.30.N, 85.30.
Language: Russian


Citation: I. V. Korobov, A. F. Plotnikov, Yu. M. Popov, V. N. Seleznev, “Reversible recording of optical information in metal-dielectric-semiconductor structures”, Kvantovaya Elektronika, 2:9 (1975), 2013–2018 [Sov J Quantum Electron, 5:9 (1975), 1092–1095]
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  • https://www.mathnet.ru/eng/qe11920
  • https://www.mathnet.ru/eng/qe/v2/i9/p2013
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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