Investigation of the resolution of metal-nitride-oxide-semiconductor structures in recording and reading of optical information

An investigation was made of the spatial resolution achieved in optical recording of information using a metal-nitride-oxide-semiconductor (MNOS) structure with a continuous electrode. A resolution of at least 10 μ in photoelectric reading was achieved only when an additional dielectric-film grid was deposited below the continuous electrode. Six bits of information were recorded experimentally as separate points.