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Kvantovaya Elektronika, 1976, Volume 3, Number 7, Pages 1601–1605 (Mi qe11713)  

Brief Communications

Electron-beam-excited stimulated emission from InAs

V. I. Gurfinkel', I. V. Kryukova, V V Lebedev, V. I. Leskovich, G. B. Lun'kina, E. V. Matveenko, S. S. Strel'chenko, N. P. Khatyrev, V. A. Chapnin
Abstract: An investigation was made of the cathodoluminescence of epitaxial films and bulk crystals of InAs with carrier densities in the range n = 5×1015–1018 cm–3 and p = 6×1016–1.5x1018 cm–3. Stimulated emission was obtained when epitaxial n-type InAs films with an electron density in the range (2–6) ×1016 cm–3 were excited by a 50 keV electron beam at temperatures of 85-200°K. The dependences of the output power on the pumping rate and temperature were determined and the evolution of the emission spectra was studied. The maximum stimulated radiation power was 22 W. Failure to achieve stimulated emission in the range n> 6×1016 cm–3 was attributed to the enhancement of the role of impact recombination with increasing electron density.
Received: 26.05.1975
Revised: 04.03.1976
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 7, Pages 868–870
DOI: https://doi.org/10.1070/QE1976v006n07ABEH011713
Document Type: Article
UDC: 621.378.333
PACS: 78.45.+h, 78.60.Hk
Language: Russian


Citation: V. I. Gurfinkel', I. V. Kryukova, V V Lebedev, V. I. Leskovich, G. B. Lun'kina, E. V. Matveenko, S. S. Strel'chenko, N. P. Khatyrev, V. A. Chapnin, “Electron-beam-excited stimulated emission from InAs”, Kvantovaya Elektronika, 3:7 (1976), 1601–1605 [Sov J Quantum Electron, 6:7 (1976), 868–870]
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    Квантовая электроника Quantum Electronics
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