Growth and luminescence of epitaxial Yb0.3ErxGd2.7–xGa5O12 films

A series of (Gd,Yb,Er)₃Ga₅O₁₂ films with a variable Er content was grown on Gd₃Ga₅O₁₂ substrates with the (111) orientation by liquid-phase epitaxy from a supercooled PbO — B₂O₃ melt. Variation of the film growth from sample to sample, grown under the same conditions, was explained by degradation of the molten solution. The violet colour of the first film of the series was attributed to enhanced capture, from the molten solution, of lead and platinum impurity ions and also to characteristics of charge compensation of these ions at high growth rates. Blue — green luminescence was observed for films with erbium content in excess of 0.01 at.%.