A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan, “Semiconductor laser utilizing intraband transitions between magnetic-film levels”, Kvantovaya Elektronika, 2:8 (1975), 1648–1653 [Sov J Quantum Electron, 5:8 (1975), 891

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Kvantovaya Elektronika, 1975, Volume 2, Number 8, Pages 1648–1653 (Mi qe11644)

Semiconductor laser utilizing intraband transitions between magnetic-film levels

A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan

Full-text PDF (705 kB)

Abstract: A thin-film semiconductor laser is analyzed theoretically. The gain is calculated for transitions between magnetic-film levels. The threshold conditions are deduced.

Received: 30.12.1974

English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 8, Pages 891–894
DOI: https://doi.org/10.1070/QE1975v005n08ABEH011644

Document Type: Article

UDC: 621.378.35

PACS: 42.60.J

Language: Russian

Citation: A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan, “Semiconductor laser utilizing intraband transitions between magnetic-film levels”, Kvantovaya Elektronika, 2:8 (1975), 1648–1653 [Sov J Quantum Electron, 5:8 (1975), 891–894]

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https://www.mathnet.ru/eng/qe11644

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Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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