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Semiconductor laser utilizing intraband transitions between magnetic-film levels
A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan
Abstract:
A thin-film semiconductor laser is analyzed theoretically. The gain is calculated for transitions between magnetic-film levels. The threshold conditions are deduced.
Received: 30.12.1974
Citation:
A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan, “Semiconductor laser utilizing intraband transitions between magnetic-film levels”, Kvantovaya Elektronika, 2:8 (1975), 1648–1653 [Sov J Quantum Electron, 5:8 (1975), 891–894]
Linking options:
https://www.mathnet.ru/eng/qe11644 https://www.mathnet.ru/eng/qe/v2/i8/p1648
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Statistics & downloads: |
Abstract page: | 87 | Full-text PDF : | 62 |
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