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Kvantovaya Elektronika, 1978, Volume 5, Number 11, Pages 2495–2497 (Mi qe11339)  

Brief Communications

Possibility of constructing optical memory elements from MIS structures based on GaAs

V. A. Gaĭsler, A. F. Kravchenko, V. F. Solov'ev, A. S. Terekhov
Abstract: A study was made of the possibility of constructing optical memory elements from GaAs MIS structures. In these elements the data were stored not by the capture of carriers by states in the insulator but by utilizing the finite relaxation time of the nonequilibrium space-charge region. The spectral and time dependences of the contrast of the structures were determined. The investigated structures could store data for ~10 msec. The experimental results indicated that it should be possible to use GaAs MIS structures as immediate-access optical memories.
Received: 14.03.1978
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 11, Pages 1410–1411
DOI: https://doi.org/10.1070/QE1978v008n11ABEH011339
Document Type: Article
UDC: 681.327.68
PACS: 42.30.Nt
Language: Russian


Citation: V. A. Gaĭsler, A. F. Kravchenko, V. F. Solov'ev, A. S. Terekhov, “Possibility of constructing optical memory elements from MIS structures based on GaAs”, Kvantovaya Elektronika, 5:11 (1978), 2495–2497 [Sov J Quantum Electron, 8:11 (1978), 1410–1411]
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    Квантовая электроника Quantum Electronics
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