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This article is cited in 14 scientific papers (total in 14 papers)
Letters to the editor
Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses
R. V. Volkova, V. M. Gordienkoa, M. S. Dzhidzhoevb, B. V. Kamenevb, P. K. Kashkarovb, Yu. V. Ponomarevb, A. B. Savel'eva, V. Yu. Timoshenkob, A. A. Shashkovb a International Laser Center of Moscow State University
b Lomonosov Moscow State University, Faculty of Physics
Abstract:
Irradiation of porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 1016 W cm–2 intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 8 keV. The increase was 30-fold for E > 2.5 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated.
Received: 30.10.1997
Citation:
R. V. Volkov, V. M. Gordienko, M. S. Dzhidzhoev, B. V. Kamenev, P. K. Kashkarov, Yu. V. Ponomarev, A. B. Savel'ev, V. Yu. Timoshenko, A. A. Shashkov, “Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses”, Kvantovaya Elektronika, 25:1 (1998), 3–4 [Quantum Electron., 28:1 (1998), 1–2]
Linking options:
https://www.mathnet.ru/eng/qe1125 https://www.mathnet.ru/eng/qe/v25/i1/p3
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Abstract page: | 213 | Full-text PDF : | 87 | First page: | 1 |
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