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Kvantovaya Elektronika, 1998, Volume 25, Number 1, Pages 3–4 (Mi qe1125)  

This article is cited in 14 scientific papers (total in 14 papers)

Letters to the editor

Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses

R. V. Volkova, V. M. Gordienkoa, M. S. Dzhidzhoevb, B. V. Kamenevb, P. K. Kashkarovb, Yu. V. Ponomarevb, A. B. Savel'eva, V. Yu. Timoshenkob, A. A. Shashkovb

a International Laser Center of Moscow State University
b Lomonosov Moscow State University, Faculty of Physics
Abstract: Irradiation of porous (with porosity in excess of 70%) silicon target with femtosecond laser pulses of 1016 W cm–2 intensity increased by a factor of 3.5 the efficiency of generation of hard x-ray radiation with photon energies E > 8 keV. The increase was 30-fold for E > 2.5 keV. The relationship between this effect and the parameters of the luminescence emitted by porous silicon was investigated.
Received: 30.10.1997
English version:
Quantum Electronics, 1998, Volume 28, Issue 1, Pages 1–2
DOI: https://doi.org/10.1070/QE1998v028n01ABEH001125
Bibliographic databases:
Document Type: Article
PACS: 52.25.Nr, 52.50.Jm, 61.80.Ba
Language: Russian


Citation: R. V. Volkov, V. M. Gordienko, M. S. Dzhidzhoev, B. V. Kamenev, P. K. Kashkarov, Yu. V. Ponomarev, A. B. Savel'ev, V. Yu. Timoshenko, A. A. Shashkov, “Generation of hard x-ray radiation by irradiation of porous silicon with ultraintense femtosecond laser pulses”, Kvantovaya Elektronika, 25:1 (1998), 3–4 [Quantum Electron., 28:1 (1998), 1–2]
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  • https://www.mathnet.ru/eng/qe/v25/i1/p3
  • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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