Influence of imperfections in the crystal structure of gallium arsenide on the parameters of electron-beam excited lasers

An investigation was made of the parameters of the radiation emitted by electron-beam-excited lasers made of gallium arsenide single crystals prepared by different methods. A correlation was established between the radiative characteristics of these lasers and the degree of structure imperfection of the crystals, determined by x-ray diffraction methods. The high efficiency and homogeneity of the laser emission from the samples prepared by the Stockbarger method was attributed to a high quality of the structure of crystals produced in this way.