Selective excitation of waveguide modes and measurement of the parameters of AlxGa1–xAs–GaAs film heterostructures intended for integrated optics applications

An investigation was made of a method for effective coupling of laser radiation (λ = 1.15 μ) by a prism into thin (5–15 μ) GaAs films grown epitaxially on Al_xGa_1–xAs substrates. Waveguide modes were excited selectively. The optical parameters of the waveguides were deduced from the measured phase-matching angles of the excited modes.