Kvantovaya Elektronika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor
Submit a manuscript

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Kvantovaya Elektronika:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Kvantovaya Elektronika, 1997, Volume 24, Number 12, Pages 1137–1144 (Mi qe1106)  

This article is cited in 20 scientific papers (total in 20 papers)

Laser activation and metallisation of insulators

G. A. Shafeev

A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russian Federation
Abstract: An analysis is made of two-stage metallisation of insulator surfaces. Laser ablation of the surfaces of a number of insulators (activation stage) creates, on the irradiated surface, catalytic centres capable of reducing metals (deposition stage) in special solutions. Autocatalytic deposition spreads a metal over the whole ablated surface. A review is given of the experimental data on laser activation of Al2O3, SiC, diamond, ZrO2, and other insulators. Surface activation is observed in a wide range of laser radiation wavelengths and is retained for a long time, which makes it possible to deposit a number of metals (Cu, Ni, Pt, Pd, etc.) with a spatial resolution of the order of several microns. A model of the process is considered: according to this model, laser activation is the result of modification of a band gap of an insulator by ablation and appearance of a nonzero density of the electron states with energies close to the reduction potential of a metal. This in turn may be related to the formation of point defects (for example, F centres in Al2O3 and ZrO2) in an insulator or to band bending in the field of mechanical stresses that remain in the treated material after ablation. Data on the activation of insulators by mechanical indentation are in qualitative agreement with the proposed model.
Received: 20.05.1997
English version:
Quantum Electronics, 1997, Volume 27, Issue 12, Pages 1104–1110
DOI: https://doi.org/10.1070/QE1997v027n12ABEH001106
Bibliographic databases:
Document Type: Article
PACS: 42.62.Cf, 81.15.Fg, 61.80.Ba
Language: Russian


Citation: G. A. Shafeev, “Laser activation and metallisation of insulators”, Kvantovaya Elektronika, 24:12 (1997), 1137–1144 [Quantum Electron., 27:12 (1997), 1104–1110]
Linking options:
  • https://www.mathnet.ru/eng/qe1106
  • https://www.mathnet.ru/eng/qe/v24/i12/p1137
  • This publication is cited in the following 20 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
    Statistics & downloads:
    Abstract page:391
    Full-text PDF :348
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024