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Kvantovaya Elektronika, 1975, Volume 2, Number 3, Pages 623–627 (Mi qe11055)  

Chronicle

First Ail-Union Conference on Physical Processes in Heterojunctions, Kishinev, October 30–November 1,1974

P. G. Eliseev
Abstract: A brief review is given of the papers presented at the First All-Union Conference on Physical Processes in Heterojunctions, held in Kishinev between October 30 and November 1, 1974. The Conference reports included descriptions of solid-solution heterojunctions used in efficient light-emitting diodes, injection lasers, photodetectors, solar cells, and other devices with characteristics greatly superior to those of the corresponding pn junction devices. The search for new materials suitable for the fabrication of perfect heterojunctions has now been extended to the wide class of quaternary solid solutions of II-VI and III-V compounds. Heterojunction lasers using the AlSb–GaSb and InP–In1–xGaxP1–xAsy systems have been developed. The conference demonstrated considerable progress in the physics of heterojunction lasers.
English version:
Soviet Journal of Quantum Electronics, 1975, Volume 5, Issue 3, Pages 353–355
DOI: https://doi.org/10.1070/QE1975v005n03ABEH011055
Document Type: Information matherial
UDC: 621.382.3
PACS: 01.10.F, 85.30., 42.60.J, 85.60.G
Language: Russian


Citation: P. G. Eliseev, “First Ail-Union Conference on Physical Processes in Heterojunctions, Kishinev, October 30–November 1,1974”, Kvantovaya Elektronika, 2:3 (1975), 623–627 [Sov J Quantum Electron, 5:3 (1975), 353–355]
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