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Brief Communications
Extraction of radiation from an electron-beam-excited semiconductor laser through a diffraction grating
I. G. Goncharov, K. B. Dedushenko, A. V. Kozhevnikov, V. N. Luk'yanov, A. F. Uzkii, V. I. Shveikin, N. V. Shelkov, S. D. Yakubovich
Abstract:
A diffraction grating, deposited on the active-layer surface, was used to extract radiation from an electronbeam- excited GaAs laser at 77°K. The angular distribution of the output radiation consisted of two lobes of 0.5° half-width inclined by 1.6° with respect to the normal.
Received: 10.11.1974
Citation:
I. G. Goncharov, K. B. Dedushenko, A. V. Kozhevnikov, V. N. Luk'yanov, A. F. Uzkii, V. I. Shveikin, N. V. Shelkov, S. D. Yakubovich, “Extraction of radiation from an electron-beam-excited semiconductor laser through a diffraction grating”, Kvantovaya Elektronika, 2:3 (1975), 621–622 [Sov J Quantum Electron, 5:3 (1975), 352]
Linking options:
https://www.mathnet.ru/eng/qe11052 https://www.mathnet.ru/eng/qe/v2/i3/p621
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| Abstract page: | 125 | | Full-text PDF : | 63 |
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