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Kvantovaya Elektronika, 1976, Volume 3, Number 3, Pages 612–614 (Mi qe11023)  

This article is cited in 4 scientific papers (total in 4 papers)

Brief Communications

Electron-beam-pumped ZnSe-ZnS heterolaser

O. V. Bogdankevich, B. M. Lavrushin, O. V. Matveev, V. F. Pevtsov, M. M. Khalimon
Full-text PDF (534 kB) Citations (4)
Abstract: Heterostructures of the ZnSe-GaAs, CdSe-CdS, and ZnSe-ZnS type were fabricated and stimulated emission was obtained when these structures were excited by an electron beam. The best results were obtained for the ZnSe-ZnS heterostructure: the laser threshold was 6 A/cm2, the output power was 50 W (for E0 = 50 keV incident electrons), and the efficiency was 6 %.
Received: 11.07.1975
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 3, Pages 329–331
DOI: https://doi.org/10.1070/QE1976v006n03ABEH011023
Document Type: Article
UDC: 621.378.35
PACS: 42.60.Jf
Language: Russian


Citation: O. V. Bogdankevich, B. M. Lavrushin, O. V. Matveev, V. F. Pevtsov, M. M. Khalimon, “Electron-beam-pumped ZnSe-ZnS heterolaser”, Kvantovaya Elektronika, 3:3 (1976), 612–614 [Sov J Quantum Electron, 6:3 (1976), 329–331]
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  • https://www.mathnet.ru/eng/qe/v3/i3/p612
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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