Influence of laser radiation on the state of a solid solution of iron in silicon

Formation of defects in silicon by 10⁸ W/cm² laser radiation was investigated by electrical methods. The stress waves generated by laser radiation were found to alter the local positions of atoms of various elements in the crystal lattice. The greatest changes in the concentrations of different atoms were observed at the considerable depth (~ 0.5–2 mm). Introduction of heavy-element dopants made it possible to reduce the threshold of formation of point defects. This method could be used in further studies of the nature of radiation damage in semiconductor crystals.