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Luminescence tracks in a semiconductor subjected to two-photon excitation with ultrashort light pulses
D. I. Gruev, V. S. Dneprovskii, E. K. Silina
Abstract:
An investigation was made of luminescence tracks in a CdS0.7Se0.3 crystal subjected to two-photon excitation with ultrashort light pulses. The characteristics of these tracks (dependence of the luminescence intensity of the distance between the point of observation and the entry face of a sample), observed in a crystal cooled to liquid-nitrogen temperature, were explained by the self-induced transparency. The problem of the propagation of an ultrashort light pulse in a resonantly absorbing medium is solved using a two-level model and allowing for the finite polarization relaxation time. This solution explains qualitatively the experimental results.
Received: 10.07.1974
Citation:
D. I. Gruev, V. S. Dneprovskii, E. K. Silina, “Luminescence tracks in a semiconductor subjected to two-photon excitation with ultrashort light pulses”, Kvantovaya Elektronika, 2:2 (1975), 352–358 [Sov J Quantum Electron, 5:2 (1975), 200–203]
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https://www.mathnet.ru/eng/qe10897 https://www.mathnet.ru/eng/qe/v2/i2/p352
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Abstract page: | 140 | Full-text PDF : | 74 |
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