V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 14:11 (1987), 2201–2202 [Sov J Quantum Electron, 17:11 (1987), 1402

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Kvantovaya Elektronika, 1987, Volume 14, Number 11, Pages 2201–2202 (Mi qe10879)

Lasers and physical processes in them

Low-threshold InGaAsP/InP injection lasers

V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin

Full-text PDF (368 kB)

Abstract: A determination was made of the characteristics of InGaAsP/InP injection lasers emitting at wavelengths in the region of 1.3μ. The minimum threshold current was 4 mA and cw operation was possible up to 120°C, which was the highest temperature achieved so far for lasers of this type and in this spectral range.

Received: 03.06.1987

English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 11, Pages 1402–1403
DOI: https://doi.org/10.1070/QE1987v017n11ABEH010879

Bibliographic databases:

Document Type: Article

UDC: 621.378.826.038.854.4

PACS: 42.55.Px, 42.60.Jf, 42.60.Pk

Language: Russian

Citation: V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 14:11 (1987), 2201–2202 [Sov J Quantum Electron, 17:11 (1987), 1402–1403]

Linking options:

https://www.mathnet.ru/eng/qe10879

https://www.mathnet.ru/eng/qe/v14/i11/p2201

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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Abstract page:	124
Full-text PDF :	65
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