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Kvantovaya Elektronika, 1987, Volume 14, Number 11, Pages 2201–2202 (Mi qe10879)  

Lasers and physical processes in them

Low-threshold InGaAsP/InP injection lasers

V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin
Abstract: A determination was made of the characteristics of InGaAsP/InP injection lasers emitting at wavelengths in the region of 1.3μ. The minimum threshold current was 4 mA and cw operation was possible up to 120°C, which was the highest temperature achieved so far for lasers of this type and in this spectral range.
Received: 03.06.1987
English version:
Soviet Journal of Quantum Electronics, 1987, Volume 17, Issue 11, Pages 1402–1403
DOI: https://doi.org/10.1070/QE1987v017n11ABEH010879
Bibliographic databases:
Document Type: Article
UDC: 621.378.826.038.854.4
PACS: 42.55.Px, 42.60.Jf, 42.60.Pk
Language: Russian


Citation: V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 14:11 (1987), 2201–2202 [Sov J Quantum Electron, 17:11 (1987), 1402–1403]
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