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Kvantovaya Elektronika, 1976, Volume 3, Number 2, Pages 288–292 (Mi qe10868)  

This article is cited in 1 scientific paper (total in 1 paper)

Photoinduced conductivity and damage threshold of copper organoacetylenides illuminated with neodymium laser radiation

V. S. Myl'nikov, A. A. Kharchenko, M. M. Sobolev
Full-text PDF (879 kB) Citations (1)
Abstract: An investigation was made of the photoconductivity induced in metallo-organic semiconductors (copper organoacetylenides) by neodymium laser radiation and the damage thresholds of these compounds were determined. These thresholds increased monotonically with increasing forbidden band width and an induced photoconductivity from local levels in the forbidden band of copper phenylacetylenide appeared at energies which were three orders of magnitude lower than the damage threshold.
Received: 04.05.1975
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 2, Pages 151–153
DOI: https://doi.org/10.1070/QE1976v006n02ABEH010868
Document Type: Article
UDC: 535.215:621.373
PACS: 72.40.+w, 61.80.-x
Language: Russian


Citation: V. S. Myl'nikov, A. A. Kharchenko, M. M. Sobolev, “Photoinduced conductivity and damage threshold of copper organoacetylenides illuminated with neodymium laser radiation”, Kvantovaya Elektronika, 3:2 (1976), 288–292 [Sov J Quantum Electron, 6:2 (1976), 151–153]
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  • This publication is cited in the following 1 articles:
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    Квантовая электроника Quantum Electronics
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