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Kvantovaya Elektronika, 1976, Volume 3, Number 1, Pages 219–221 (Mi qe10856)  

Brief Communications

Reversible recording of holograms in glassy chalcogenide semiconductors at elevated temperatures

V. E. Karnatovskiĭ, V. I. Nalivaĭko, V. G. Tsukerman
Abstract: An investigation was made of the influence of temperature on the optical properties of plane-parallel plates (0.2–0.8 mm thick) of glassy arsenic sulfide. At elevated temperatures, close to the glass-transition temperature (180°C), the hologram-recording properties of this material improved considerably: the parameters were found to be stable in reversible recording, the maximum possible diffraction efficiency increased to ~50%, and the sensitivity of the plates to the radiation became greater (the hologram recording time fell to several seconds). It was found possible to record information in real time and to read holograms nondestructively in As2S3 plates with the same He–Ne laser beam (632.8 nm).
Received: 26.06.1975
English version:
Soviet Journal of Quantum Electronics, 1976, Volume 6, Issue 1, Pages 121–123
DOI: https://doi.org/10.1070/QE1976v006n01ABEH010856
Document Type: Article
UDC: 621.315.592
PACS: 42.40.Ht, 42.70.Ce
Language: Russian


Citation: V. E. Karnatovskiĭ, V. I. Nalivaĭko, V. G. Tsukerman, “Reversible recording of holograms in glassy chalcogenide semiconductors at elevated temperatures”, Kvantovaya Elektronika, 3:1 (1976), 219–221 [Sov J Quantum Electron, 6:1 (1976), 121–123]
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