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This article is cited in 3 scientific papers (total in 3 papers)
Brief Communications
Semiconductor laser with a distributed feedback
V. N. Luk'yanov, N. V. Shelkov, S. D. Yakubovich
Abstract:
Stimulated emission was obtained from an optically pumped gallium arsenide laser with a distributed feedback. The feedback was produced by a diffraction grating formed on the surface of a p –type GaAs layer prepared by the diffusion of zinc into an n –type substrate. The grating was in optical contact with the active layer and its period satisfied the Bragg condition for a guided mode within the gain band of the laser. For the selected Bragg scattering order, the radiation was extracted at right angles to the grating surface. The far-field distribution consisted of a single lobe with a divergence of 5–20', which corresponded to the emission from one to five randomly distributed modes whose frequencies depended on the position of the excited region in the laser.
Received: 25.07.1974
Citation:
V. N. Luk'yanov, N. V. Shelkov, S. D. Yakubovich, “Semiconductor laser with a distributed feedback”, Kvantovaya Elektronika, 2:1 (1975), 163–165 [Sov J Quantum Electron, 5:1 (1975), 99–100]
Linking options:
https://www.mathnet.ru/eng/qe10804 https://www.mathnet.ru/eng/qe/v2/i1/p163
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Abstract page: | 130 | Full-text PDF : | 82 |
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