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Kvantovaya Elektronika, 1978, Volume 5, Number 9, Pages 2035–2038 (Mi qe10767)  

Brief Communications

Two-dimensional variable-gap structures in longitudinally pumped semiconductor lasers

O. V. Bogdankevich, B. A. Bryunetkin, S. A. Darznek, M. M. Zverev, V. A. Ushakhin
Abstract: A theoretical analysis is made of the threshold characteristics of two-dimensional variable-gap structures in lasers excited longitudinally by electron bombardment. It is shown that an optimal selection of the parameters of the system can reduce the threshold current density by a factor of 3000 compared with a homogeneous resonator.
Received: 06.01.1978
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 9, Pages 1148–1150
DOI: https://doi.org/10.1070/QE1978v008n09ABEH010767
Document Type: Article
UDC: 621.373.8.038.825.4
PACS: 42.55.Px
Language: Russian


Citation: O. V. Bogdankevich, B. A. Bryunetkin, S. A. Darznek, M. M. Zverev, V. A. Ushakhin, “Two-dimensional variable-gap structures in longitudinally pumped semiconductor lasers”, Kvantovaya Elektronika, 5:9 (1978), 2035–2038 [Sov J Quantum Electron, 8:9 (1978), 1148–1150]
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    Квантовая электроника Quantum Electronics
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