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This article is cited in 2 scientific papers (total in 2 papers)
Brief Communications
Method for measuring the optical gain in semiconductors
A. G. Zverev, R. F. Nabiev, A. N. Pechenov, Yu. M. Popov, S. D. Skorbun
Abstract:
It is shown that a widely used method for measuring the gain in semiconductors, based on the dependence of the radiation intensity on the length of the active region, is incorrect since it neglects the escape of radiation through the surface of the excited region into the passive part of the crystal.
Received: 28.03.1980
Citation:
A. G. Zverev, R. F. Nabiev, A. N. Pechenov, Yu. M. Popov, S. D. Skorbun, “Method for measuring the optical gain in semiconductors”, Kvantovaya Elektronika, 7:9 (1980), 2011–2014 [Sov J Quantum Electron, 10:9 (1980), 1163–1164]
Linking options:
https://www.mathnet.ru/eng/qe10695 https://www.mathnet.ru/eng/qe/v7/i9/p2011
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Abstract page: | 165 | Full-text PDF : | 74 |
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