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Kvantovaya Elektronika, 1997, Volume 24, Number 10, Pages 885–890 (Mi qe1069)  

This article is cited in 14 scientific papers (total in 14 papers)

Lasers

Superfluorescence in semiconductor lasers

P. P. Vasil'ev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
Abstract: An analysis is made of the conditions for the generation of superfluorescence pulses in an inverted medium of electron—hole pairs in a semiconductor. It is shown that strong optical amplification in laser semiconductor amplifiers characterised by αL ≫ 1 (α is the small-signal gain and L is the amplifier length) leads to suppression of phase relaxation of the medium during the initial stages of evolution of superfluorescence and to formation of a macroscopic dipole from electron – hole pairs. Cooperative emission of radiation in this system results in generation of a powerful ultrashort pulse of the optical gain, which interacts coherently with the semiconductor medium. It is shown that coherent pulsations of the optical field, observed earlier by the author in Q-switched semiconductor lasers, are the result of superfluorescence and of the coherent interaction between the optical field and the medium.
Received: 24.04.1997
English version:
Quantum Electronics, 1997, Volume 27, Issue 10, Pages 860–865
DOI: https://doi.org/10.1070/QE1997v027n10ABEH001069
Bibliographic databases:
Document Type: Article
PACS: 42.50.Fx, 42.55.Px
Language: Russian


Citation: P. P. Vasil'ev, “Superfluorescence in semiconductor lasers”, Kvantovaya Elektronika, 24:10 (1997), 885–890 [Quantum Electron., 27:10 (1997), 860–865]
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  • https://www.mathnet.ru/eng/qe1069
  • https://www.mathnet.ru/eng/qe/v24/i10/p885
  • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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