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Brief Communications
Fast-response photodiode based on a surface-barrier $Au-nn^+-GaAs$ structure
Yu. A. Vasil'ev, Yu. V. Dmitriev, P. G. Eliseev, I. A. Skopin, V. I. Stafeev P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract:
A fast-response photodiode was constructed from a surface-barrier $Au-nn^+-GaAs$ structure. The active $n$-type region was a film grown by vapor epitaxy and characterized by a free-electron density $n=10^{14}-10^{15}$ cm${}^{-3}$. The photodiode was highly sensitive in a wide spectral range of 0.25-0.9$\mu m$. The monochromatic current responsivity was 0.5 A/W at $\lambda=0,8\mu m$. The rise time of the photoresponse signal was 100 psec when the bias voltage was up to 50 V.
Received: 29.02.1980
Citation:
Yu. A. Vasil'ev, Yu. V. Dmitriev, P. G. Eliseev, I. A. Skopin, V. I. Stafeev, “Fast-response photodiode based on a surface-barrier $Au-nn^+-GaAs$ structure”, Kvantovaya Elektronika, 7:10 (1980), 2218–2221 [Sov J Quantum Electron, 10:10 (1980), 1288–1289]
Linking options:
https://www.mathnet.ru/eng/qe10575 https://www.mathnet.ru/eng/qe/v7/i10/p2218
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Abstract page: | 153 | Full-text PDF : | 72 |
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