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This article is cited in 1 scientific paper (total in 1 paper)
Brief Communications
Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube
V. I. Kozlovsky, S. V. Kuchaev, A. S. Nasibov, A. N. Pechenov, A. F. Plotnikov, Yu. M. Popov, R. M. Savvina, V. N. Seleznev P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Abstract:
It is shown that an optoelectronic internal memory can be based on a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube. The capacity of this memory is $10^9-10^{10}$ bit and the data access speed is $10^3-10^4$ bit per 50 $\mu s$.
Received: 04.01.1980
Citation:
V. I. Kozlovsky, S. V. Kuchaev, A. S. Nasibov, A. N. Pechenov, A. F. Plotnikov, Yu. M. Popov, R. M. Savvina, V. N. Seleznev, “Optoelectronic internal memory utilizing a metal–nitride–oxide–semiconductor structure and a laser electron-beam tube”, Kvantovaya Elektronika, 7:7 (1980), 1585–1588 [Sov J Quantum Electron, 10:7 (1980), 917–919]
Linking options:
https://www.mathnet.ru/eng/qe10470 https://www.mathnet.ru/eng/qe/v7/i7/p1585
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Abstract page: | 172 | Full-text PDF : | 93 |
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