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Kvantovaya Elektronika, 1978, Volume 5, Number 7, Pages 1530–1534 (Mi qe10448)  

Effect of a small-amplitude alternating electric field on the PLZT ceramic with "memory"

I. N. Kompanets, A. G. Sobolev
Abstract: A study was made of the influence of an alternating electric field on the process of domain reorientation in the ferroelectric PLZT ceramic. Experimental results were compared with calculations.
Received: 18.07.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 7, Pages 873–875
DOI: https://doi.org/10.1070/QE1978v008n07ABEH010448
Document Type: Article
UDC: 666.593.5:535
PACS: 77.80.Dj, 42.80.Ks
Language: Russian


Citation: I. N. Kompanets, A. G. Sobolev, “Effect of a small-amplitude alternating electric field on the PLZT ceramic with "memory"”, Kvantovaya Elektronika, 5:7 (1978), 1530–1534 [Sov J Quantum Electron, 8:7 (1978), 873–875]
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    Квантовая электроника Quantum Electronics
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