Semiconductor laser with 133Cs vapor external selective mirror

Pulsed stimulated emission near the D₂ line of ¹³³Cs (852.1 nm) was obtained from a semiconductor laser with an external selective element utilizing specular reflection from a cesium vapor cell. The power and spectral width of the stimulated emission at a vapor pressure of 2 Torr were 1 mW and 5×10^–3 nm, respectively. Investigations were made of the spectral and temporal characteristics of the laser radiation at different cesium vapor pressures. An analysis was made of the conditions needed to enhance substantially the average stimulated emission power. The possibility of using a laser with an external selectively reflecting cell for optical pumping of alkali metal vapors is discussed. The resonance absorption lines of rubidium and potassium were recorded using a pulsed injection laser.