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Kvantovaya Elektronika, 1978, Volume 5, Number 7, Pages 1465–1470 (Mi qe10427)  

This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor laser with 133Cs vapor external selective mirror

V. L. Velichanskiĭ, A. S. Zibrov, V. V. Nikitin, V. A. Sautenkov, V. K. Malyshev, G. G. Kharisov
Full-text PDF (951 kB) Citations (3)
Abstract: Pulsed stimulated emission near the D2 line of 133Cs (852.1 nm) was obtained from a semiconductor laser with an external selective element utilizing specular reflection from a cesium vapor cell. The power and spectral width of the stimulated emission at a vapor pressure of 2 Torr were 1 mW and 5×10–3 nm, respectively. Investigations were made of the spectral and temporal characteristics of the laser radiation at different cesium vapor pressures. An analysis was made of the conditions needed to enhance substantially the average stimulated emission power. The possibility of using a laser with an external selectively reflecting cell for optical pumping of alkali metal vapors is discussed. The resonance absorption lines of rubidium and potassium were recorded using a pulsed injection laser.
Received: 08.07.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 7, Pages 836–839
DOI: https://doi.org/10.1070/QE1978v008n07ABEH010427
Document Type: Article
UDC: 621.378.9
PACS: 42.55.Px
Language: Russian


Citation: V. L. Velichanskiĭ, A. S. Zibrov, V. V. Nikitin, V. A. Sautenkov, V. K. Malyshev, G. G. Kharisov, “Semiconductor laser with 133Cs vapor external selective mirror”, Kvantovaya Elektronika, 5:7 (1978), 1465–1470 [Sov J Quantum Electron, 8:7 (1978), 836–839]
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  • https://www.mathnet.ru/eng/qe10427
  • https://www.mathnet.ru/eng/qe/v5/i7/p1465
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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