V. E. Karnatovskiĭ, V. G. Tsukerman, “Induced anisotropy in a glassy material of the As–S system”, Kvantovaya Elektronika, 5:6 (1978), 1394–1395 [Sov J Quantum Electron, 8:6 (1978), 803

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Kvantovaya Elektronika, 1978, Volume 5, Number 6, Pages 1394–1395 (Mi qe10415)

This article is cited in 1 scientific paper (total in 1 paper)

Brief Communications

Induced anisotropy in a glassy material of the As–S system

V. E. Karnatovskiĭ, V. G. Tsukerman

Full-text PDF (349 kB) Citations (1)

Abstract: The anisotropic properties of some chalcogenide glassy semiconductors changed under the influence of temperature and laser radiation of 0.63 μ wavelength. The induced anisotropy was found to be a function of the composition and previous history of a sample, and was associated with the appearance of nuclei of a new phase as a result of preliminary annealing.

Received: 28.12.1977

English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 6, Pages 803–804
DOI: https://doi.org/10.1070/QE1978v008n06ABEH010415

Document Type: Article

UDC: 621.315.592

PACS: 78.20.Fm, 42.60.He

Language: Russian

Citation: V. E. Karnatovskiĭ, V. G. Tsukerman, “Induced anisotropy in a glassy material of the As–S system”, Kvantovaya Elektronika, 5:6 (1978), 1394–1395 [Sov J Quantum Electron, 8:6 (1978), 803–804]

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https://www.mathnet.ru/eng/qe10415

https://www.mathnet.ru/eng/qe/v5/i6/p1394

This publication is cited in the following 1 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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