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Kvantovaya Elektronika, 1978, Volume 5, Number 6, Pages 1368–1370 (Mi qe10402)  

Brief Communications

Some characteristics of stimulated emission of coherent radiation from narrow-gap semiconductors

S. M. Karavaev, L. N. Kurbatov, A. D. Britov
Abstract: An analysis is made of those characteristics of narrow-gap crystal lasers which are associated with free-carrier absorption. It is shown that allowance for the free-carrier losses demonstrates that stimulated emission at a given wavelength is possible up to a certain temperature whose value rises on reduction in λ. The dependences of the threshold pumping intensity on the hole density at 77 °K are calculated and the optimal densities, corresponding to the threshold minimum, are found.
Received: 22.09.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 6, Pages 782–783
DOI: https://doi.org/10.1070/QE1978v008n06ABEH010402
Document Type: Article
UDC: 621.373.8.029.71/73
PACS: 42.55.Px
Language: Russian


Citation: S. M. Karavaev, L. N. Kurbatov, A. D. Britov, “Some characteristics of stimulated emission of coherent radiation from narrow-gap semiconductors”, Kvantovaya Elektronika, 5:6 (1978), 1368–1370 [Sov J Quantum Electron, 8:6 (1978), 782–783]
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