O. V. Bogdankevich, N. A. Borisov, B. A. Bryunetkin, S. A. Darznek, V. F. Pevtsov, “Variable-gap structures in electron-beam-pumped semiconductor lasers”, Kvantovaya Elektronika, 5:6 (1978), 1310–1317 [Sov J Quantum Electron, 8:6 (1978), 747

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Kvantovaya Elektronika, 1978, Volume 5, Number 6, Pages 1310–1317 (Mi qe10389)

This article is cited in 4 scientific papers (total in 4 papers)

Variable-gap structures in electron-beam-pumped semiconductor lasers

O. V. Bogdankevich, N. A. Borisov, B. A. Bryunetkin, S. A. Darznek, V. F. Pevtsov

Full-text PDF (1439 kB) Citations (4)

Abstract: A theoretical analysis is made of the active carrier distribution and carrier collection efficiency in threelayer and variable-gap structures in electron-beam-pumped semiconductors. It is shown that these structures make it possible to lower the laser stimulated emission threshold by more than an order of magnitude with a carrier collection efficiency of up to 100%.

Received: 05.07.1977

English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 6, Pages 747–751
DOI: https://doi.org/10.1070/QE1978v008n06ABEH010389

Document Type: Article

UDC: 621.373.826.038.825.4

PACS: 42.55.Px

Language: Russian

Citation: O. V. Bogdankevich, N. A. Borisov, B. A. Bryunetkin, S. A. Darznek, V. F. Pevtsov, “Variable-gap structures in electron-beam-pumped semiconductor lasers”, Kvantovaya Elektronika, 5:6 (1978), 1310–1317 [Sov J Quantum Electron, 8:6 (1978), 747–751]

Linking options:

https://www.mathnet.ru/eng/qe10389

https://www.mathnet.ru/eng/qe/v5/i6/p1310

This publication is cited in the following 4 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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