O. V. Zhuravleva, V. D. Kurnosov, V. I. Shveikin, “Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers”, Kvantovaya Elektronika, 24:9 (1997), 773–775 [Quantum Electron., 27:9 (1997), 753

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Kvantovaya Elektronika, 1997, Volume 24, Number 9, Pages 773–775 (Mi qe1038)

This article is cited in 2 scientific papers (total in 2 papers)

Lasers

Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers

O. V. Zhuravleva, V. D. Kurnosov, V. I. Shveikin

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Full-text PDF (170 kB) Citations (2)

Abstract: An investigation was made of the radiation strength of GaAlAs — GaAs and InGaAsP — InP semiconductor lasers. This strength fell with increase in the laser emission wavelength. The highest radiation strength was observed for semiconductor lasers emitting at the wavelength of 0.85 μm.

Received: 03.02.1997

English version:
Quantum Electronics, 1997, Volume 27, Issue 9, Pages 753–755
DOI: https://doi.org/10.1070/QE1997v027n09ABEH001038

Bibliographic databases:

Document Type: Article

PACS: 61.80.Hg, 42.55.Px

Language: Russian

Citation: O. V. Zhuravleva, V. D. Kurnosov, V. I. Shveikin, “Effects of irradiation on GaAlAs — GaAs and InGaAsP — InP lasers”, Kvantovaya Elektronika, 24:9 (1997), 773–775 [Quantum Electron., 27:9 (1997), 753–755]

Linking options:

https://www.mathnet.ru/eng/qe1038

https://www.mathnet.ru/eng/qe/v24/i9/p773

This publication is cited in the following 2 articles:

Citing articles in Google Scholar: Russian citations, English citations
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