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Kvantovaya Elektronika, 1980, Volume 7, Number 7, Pages 1447–1450 (Mi qe10341)  
This article is cited in 1 scientific paper (total in 1 paper)

Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam

S. L. Bazhenov, O. V. Bogdankevich, S. A. Darznek, G. A. Meerovich, V. N. Ulasyuk

All-Union scientific research Institute for metrological service, Moscow
Full-text PDF (648 kB) Citations (1)
Abstract: Calculations are made of the threshold characteristics and transverse dimensions of a luminous spot for a laser pumped by a sharply focused electron beam. The calculations involve jointly solving equations for the electromagnetic field and the active particles. It is found that for small diameters of the electron beam, the excitation threshold and size of the lasing zone are governed by electron scattering during slowing down and diffusion of carriers across the resonator axis. A comparison is made of the results of these calculations with the experiment.
Received: 28.11.1979
English version:
Soviet Journal of Quantum Electronics, 1980, Volume 10, Issue 7, Pages 833–835
DOI: https://doi.org/10.1070/QE1980v010n07ABEH010341
Bibliographic databases:
UDC: 621.378.826.038.825.4
PACS: 42.55.Px
Language: Russian
Citation: S. L. Bazhenov, O. V. Bogdankevich, S. A. Darznek, G. A. Meerovich, V. N. Ulasyuk, “Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam”, Kvantovaya Elektronika, 7:7 (1980), 1447–1450 [Sov J Quantum Electron, 10:7 (1980), 833–835]
Citation in format AMSBIB
\Bibitem{BazBogDar80}
\by S.~L.~Bazhenov, O.~V.~Bogdankevich, S.~A.~Darznek, G.~A.~Meerovich, V.~N.~Ulasyuk
\paper Influence of carrier migration processes on threshold characteristics of semiconductor lasers pumped longitudinally by an electron beam
\jour Kvantovaya Elektronika
\yr 1980
\vol 7
\issue 7
\pages 1447--1450
\mathnet{http://mi.mathnet.ru/qe10341}
\transl
\jour Sov J Quantum Electron
\yr 1980
\vol 10
\issue 7
\pages 833--835
\crossref{https://doi.org/10.1070/QE1980v010n07ABEH010341}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=A1980KB79000008}
Linking options:
  • https://www.mathnet.ru/eng/qe10341
  • https://www.mathnet.ru/eng/qe/v7/i7/p1447
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Квантовая электроника Quantum Electronics
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