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Brief Communications
High-efficiency phase hologram recording in chalcogenide films at elevated temperatures
V. E. Karnatovskii, V. G. Remesnik, V. G. Tsukerma Institute of automation and Electrometry, Siberian branch of the USSR Academy of Sciences, Novosibirsk
Abstract:
It was found that the sensitivity of chalcogenide films to weakly absorbed light ($\alpha<10^3$ cm${}^{_1}$) increased at elevated temperatures. This effect was attributed to thermal activation of photostructural transitions and was observed in films of the $As-S$ and $As-S-Se$ systems, but not those of the $As-Se$ system. It should be possible to use this effect in highly efficient recording of phase holograms at temperatures of 100-120 degree C and for nondestructive readout at room temperature with the aid of light of just one wavelength ($\lambda=632.8$ or $\lambda=514.5$ nm).
Received: 09.08.1979 Revised: 30.11.1979
Citation:
V. E. Karnatovskii, V. G. Remesnik, V. G. Tsukerma, “High-efficiency phase hologram recording in chalcogenide films at elevated temperatures”, Kvantovaya Elektronika, 7:5 (1980), 1110–1112 [Sov J Quantum Electron, 10:5 (1980), 636–638]
Linking options:
https://www.mathnet.ru/eng/qe10223 https://www.mathnet.ru/eng/qe/v7/i5/p1110
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