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Kvantovaya Elektronika, 1978, Volume 5, Number 5, Pages 1034–1042 (Mi qe10144)  

Transverse electro-optic effect in a matrix-addressable transparency based on the PLZT ceramic

T. I. Bakunova, I. N. Kompanets, A. S. Levichev, P. N. Semochkin, A. V. Smolya, A. G. Sobolev, N. B. Fel'dman
Abstract: The transverse electrooptic effect in the PLZT ceramic was employed in constructing a matrix-addressable electrically controlled transparency with a memory. Specially shaped electrodes and an additional insulator film were used in this transparency. The requirements to be satisfied by the insulator were determined. The information recorded in the transparency was erased by a weak alternating field. The erasure mechanism was analyzed. The dynamic and contrast characteristics were determined. The combination of the transverse electrooptic effect with this erasure method made it possible to achieve an efficiency of over 50% and an optical contrast exceeding 100:1.
Received: 25.05.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 5, Pages 591–596
DOI: https://doi.org/10.1070/QE1978v008n05ABEH010144
Document Type: Article
UDC: 621.396:535.8
PACS: 42.30.Nt
Language: Russian


Citation: T. I. Bakunova, I. N. Kompanets, A. S. Levichev, P. N. Semochkin, A. V. Smolya, A. G. Sobolev, N. B. Fel'dman, “Transverse electro-optic effect in a matrix-addressable transparency based on the PLZT ceramic”, Kvantovaya Elektronika, 5:5 (1978), 1034–1042 [Sov J Quantum Electron, 8:5 (1978), 591–596]
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