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Kvantovaya Elektronika, 1978, Volume 5, Number 4, Pages 823–829 (Mi qe10057)  

This article is cited in 39 scientific papers (total in 39 papers)

Stimulated Raman scattering on rotational and vibrational transitions in nitrogen gas

V. S. Averbakh, A. I. Makarov, V. I. Talanov
Abstract: Results are presented (thresholds of the effects and spectral characteristics) of an experimental investigation of rotational (RSTRS) and vibrational stimulated Raman scattering (VSTRS) in nitrogen at low pressures (1 < p < 5 atm) and of VSTRS at pressures up to 400 atm. The RSTRS threshold did not depend on pressure and was close to the theoretical estimates whilst the VSTRS threshold at p < 2.5 atm was influenced by the correlation between the Stokes and anti-Stokes components. The relative proportion of the anti-Stokes component at p = 2 atm was 1.5%. The RSTRS spectrum contained both lines of the spontaneous spectrum for J = 0–18 and the frequencies νL± 8 Bn. In the range of competition between these two effects (2 < p < 2.5 atm) this spectrum was converted into vibrational although the conditions for direct excitation of the rotational–vibrational bands were not satisfied.
Received: 11.05.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 4, Pages 472–476
DOI: https://doi.org/10.1070/QE1978v008n04ABEH010057
Document Type: Article
UDC: 535.375.5
PACS: 42.65.Cq
Language: Russian


Citation: V. S. Averbakh, A. I. Makarov, V. I. Talanov, “Stimulated Raman scattering on rotational and vibrational transitions in nitrogen gas”, Kvantovaya Elektronika, 5:4 (1978), 823–829 [Sov J Quantum Electron, 8:4 (1978), 472–476]
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  • This publication is cited in the following 39 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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