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Kvantovaya Elektronika, 1978, Volume 5, Number 3, Pages 642–646 (Mi qe10023)  

Investigation of the dependence of the radiative properties of cadmium sulfide single crystals on the equilibrium carrier density

L. I. Borovich, A. V. Dudenkova, V. M. Leonov, Yu. M. Popov, O. N. Talenskiĭ, P. V. Shapkin
Abstract: An investigation was made of the photoluminescence spectra (T=77°K) of CdS crystals as a function of the equilibrium carrier density n=1013–1018cm–3. The effective optical gain and the threshold current density were determined at T=85°K when the same crystals were excited by an electron beam. The highest gain, amounting to 70–100 cm–1 (corresponding to j=1 A/cm2), and the lowest threshold current density were recorded for undoped crystals (n=1013–1014cm–3), whose photoluminescence spectra included the line due to free A excitons and the luminescence resulting from the recombination of these excitons accompanied by the emission of one or two longitudinal optical phonons. The results indicated that CdS crystals with n>5×1016cm–3 were unsuitable as the active material for electron-beam-excited lasers.
Received: 18.05.1977
English version:
Soviet Journal of Quantum Electronics, 1978, Volume 8, Issue 3, Pages 369–371
DOI: https://doi.org/10.1070/QE1978v008n03ABEH010023
Document Type: Article
UDC: 621.378.32+669.172
PACS: 78.55.Hx, 78.60.Fi
Language: Russian


Citation: L. I. Borovich, A. V. Dudenkova, V. M. Leonov, Yu. M. Popov, O. N. Talenskiĭ, P. V. Shapkin, “Investigation of the dependence of the radiative properties of cadmium sulfide single crystals on the equilibrium carrier density”, Kvantovaya Elektronika, 5:3 (1978), 642–646 [Sov J Quantum Electron, 8:3 (1978), 369–371]
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    Квантовая электроника Quantum Electronics
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