Tunable $Ga_xIn_{1-x}As_ySb_{1-y}$ quaternary semiconductor laser

Problems and ways of developing tunable electron-beam-pumped semiconductor lasers are discussed. The nature of the lasing transitions in semiconducting active elements made of $Ga_xIn_{1-x}As_ySb_{1-y}$, grown by liquid-phase epitaxy is analyzed on the basis of an investigation of the temperature dependences of the threshold current density and laser radiation spectra. A report is given of the development of a KGS-9 tunable sealed semiconductor laser utilizing this solid solution, capable of operating between liquid–nitrogen temperature and room temperature. The laser parameters are: total accelerating voltage up to 60 kV, pulsed laser radiation power 20-60 W, pulse duration 10-300 nsec, repetition frequency 50-500 Hz, and radiation wavelength 1.96-2.04$\mu m$.