Prikladnaya Mekhanika i Tekhnicheskaya Fizika
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Prikl. Mekh. Tekh. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Prikladnaya Mekhanika i Tekhnicheskaya Fizika, 2017, Volume 58, Issue 4, Pages 142–152
DOI: https://doi.org/10.15372/PMTF20170414 (Mi pmtf689) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Time-resolved temperature field of monocrystalline silicon irradiated by a millisecond pulse laser

G. Minga, T. Yonga, G. Xuna, Y. Boshia, J. Guangyongb

a School of Science, Changchun University of Science and Technology, Changchun, 130022, China
b College of Optical and Electronical Information Changchun University of Science and Technology, Changchun, 130022, China
Full-text PDF (456 kB) Citations (1)
DOI: https://doi.org/10.15372/PMTF20170414
Abstract: Based on the thermal conduction equation that takes into account phase changes and the evolution of thermophysical parameters with temperature, laser-induced heating and melting of monocrystalline silicon are studied. The changes in the behavior of silicon temperature at different places within the irradiation spot and at different time instants are investigated by the finite element and finite difference methods for a wide range of energy and duration of millisecond laser pulses with the Gaussian spatial and temporal shapes. The numerical results are compared with the experimental measurements.
Keywords: millisecond laser, pulse, monocrystalline silicon, temperature field, finite element method.
Received: 07.04.2016
Revised: 31.08.2016
English version:
Journal of Applied Mechanics and Technical Physics, 2017, Volume 58, Issue 4, Pages 693–701
DOI: https://doi.org/10.1134/S0021894417040149
Bibliographic databases:
Document Type: Article
UDC: 535.21: 548.4
Language: Russian
Citation: G. Ming, T. Yong, G. Xun, Y. Boshi, J. Guangyong, “Time-resolved temperature field of monocrystalline silicon irradiated by a millisecond pulse laser”, Prikl. Mekh. Tekh. Fiz., 58:4 (2017), 142–152; J. Appl. Mech. Tech. Phys., 58:4 (2017), 693–701
Citation in format AMSBIB
\Bibitem{MinYonXun17}
\by G.~Ming, T.~Yong, G.~Xun, Y.~Boshi, J.~Guangyong
\paper Time-resolved temperature field of monocrystalline silicon irradiated by a millisecond pulse laser
\jour Prikl. Mekh. Tekh. Fiz.
\yr 2017
\vol 58
\issue 4
\pages 142--152
\mathnet{http://mi.mathnet.ru/pmtf689}
\crossref{https://doi.org/10.15372/PMTF20170414}
\elib{https://elibrary.ru/item.asp?id=29823160}
\transl
\jour J. Appl. Mech. Tech. Phys.
\yr 2017
\vol 58
\issue 4
\pages 693--701
\crossref{https://doi.org/10.1134/S0021894417040149}
Linking options:
  • https://www.mathnet.ru/eng/pmtf689
  • https://www.mathnet.ru/eng/pmtf/v58/i4/p142
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Prikladnaya Mekhanika i Tekhnicheskaya Fizika Prikladnaya Mekhanika i Tekhnicheskaya Fizika
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024