Abstract:
This paper presents results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon film deposition by a gas-jet plasma-chemical method. A numerical model of a flow of gas mixtures, flowing out of an annular nozzle unit and flowing into a reactor, is developed, and it allows one to determine a film thickness distribution over the surface of substrates placed in the reactor and describes the experimental data obtained satisfactorily
Citation:
R. G. Sharafutdinov, P. A. Skovorodko, V. G. Shchukin, V. O. Konstantinov, “Silicon film deposition using a gas-jet plasma-chemical method: experiment and gas-dynamic simulation”, Prikl. Mekh. Tekh. Fiz., 59:5 (2018), 22–30; J. Appl. Mech. Tech. Phys., 59:5 (2018), 786–793