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Prikladnaya Mekhanika i Tekhnicheskaya Fizika, 1998, Volume 39, Issue 4, Pages 17–24 (Mi pmtf3285)  
Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor

A. A. Papina, A. P. Mazhirinb

a Altai State University, Barnaul 656099
b Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk 630090
Full-text PDF (587 kB)
Abstract: An exact solution of the nonlinear problem of determining the electrostatic potential and the distribution profile of an ionized impurity in the surface region of a semiconductor is constructed.
Received: 29.07.1996
Accepted: 28.11.1996
English version:
Journal of Applied Mechanics and Technical Physics, 1998, Volume 39, Issue 4, Pages 493–500
DOI: https://doi.org/10.1007/BF02471241
Bibliographic databases:
Document Type: Article
UDC: 517.93+537.33
Language: Russian
Citation: A. A. Papin, A. P. Mazhirin, “Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor”, Prikl. Mekh. Tekh. Fiz., 39:4 (1998), 17–24; J. Appl. Mech. Tech. Phys., 39:4 (1998), 493–500
Citation in format AMSBIB
\Bibitem{PapMaz98}
\by A.~A.~Papin, A.~P.~Mazhirin
\paper Example of an exact solution of the problem of the distribution of an ionized impurity in the surface region of a semiconductor
\jour Prikl. Mekh. Tekh. Fiz.
\yr 1998
\vol 39
\issue 4
\pages 17--24
\mathnet{http://mi.mathnet.ru/pmtf3285}
\elib{https://elibrary.ru/item.asp?id=25121708}
\transl
\jour J. Appl. Mech. Tech. Phys.
\yr 1998
\vol 39
\issue 4
\pages 493--500
\crossref{https://doi.org/10.1007/BF02471241}
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