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Prikladnaya Mekhanika i Tekhnicheskaya Fizika, 1999, Volume 40, Issue 5, Pages 3–10 (Mi pmtf3132)  

Formation of shock waves in flow of charge carriers in semiconductors

D. A. Krymskikh

Siberian State Geodetic Academy, Novosibirsk 630108
Abstract: A hydrodynamic model of the physics of semiconductors is studied numerically. It is shown that the solution of the problem of an $(n^+-n-n^+)$ ballistic diode has a shock wave. This problem is solved using an iterative method. An economical conservative semi-implicit difference scheme is developed for search of a numerical solution.
Received: 20.02.1998
Accepted: 30.03.1998
English version:
Journal of Applied Mechanics and Technical Physics, 1999, Volume 40, Issue 5, Pages 777–783
DOI: https://doi.org/10.1007/BF02468458
Document Type: Article
UDC: 532.5+519.63
Language: Russian
Citation: D. A. Krymskikh, “Formation of shock waves in flow of charge carriers in semiconductors”, Prikl. Mekh. Tekh. Fiz., 40:5 (1999), 3–10; J. Appl. Mech. Tech. Phys., 40:5 (1999), 777–783
Citation in format AMSBIB
\Bibitem{Kry99}
\by D.~A.~Krymskikh
\paper Formation of shock waves in flow of charge carriers in semiconductors
\jour Prikl. Mekh. Tekh. Fiz.
\yr 1999
\vol 40
\issue 5
\pages 3--10
\mathnet{http://mi.mathnet.ru/pmtf3132}
\transl
\jour J. Appl. Mech. Tech. Phys.
\yr 1999
\vol 40
\issue 5
\pages 777--783
\crossref{https://doi.org/10.1007/BF02468458}
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