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Prikladnaya Mekhanika i Tekhnicheskaya Fizika, 2000, Volume 41, Issue 3, Pages 139–148 (Mi pmtf2937)  
This article is cited in 1 scientific paper (total in 1 paper)

Boundaries of the initial melted area of a semiconductor film formed by floating-zone melting

V. I. Yakovlev

Institute of Theoretical and Applied Mechanics, Siberian Division, Russian Academy of Sciences, Novosibirsk 630090
Full-text PDF (225 kB) Citations (1)
Abstract: Stationary hydrodynamic and temperature fields near the upper triple point of the floating-zone melting process are analyzed. Regularities determining the angular position and shape of the initial melted area as functions of thermal conditions on solid and liquid surfaces in the immediate vicinity of the triple point are established in the form of four analytical relations.
Received: 30.06.1999
Accepted: 04.08.1999
English version:
Journal of Applied Mechanics and Technical Physics, 2000, Volume 41, Issue 3, Pages 504–512
DOI: https://doi.org/10.1007/BF02465303
Bibliographic databases:
Document Type: Article
UDC: 532.522
Language: Russian
Citation: V. I. Yakovlev, “Boundaries of the initial melted area of a semiconductor film formed by floating-zone melting”, Prikl. Mekh. Tekh. Fiz., 41:3 (2000), 139–148; J. Appl. Mech. Tech. Phys., 41:3 (2000), 504–512
Citation in format AMSBIB
\Bibitem{Yak00}
\by V.~I.~Yakovlev
\paper Boundaries of the initial melted area of a semiconductor film formed by floating-zone melting
\jour Prikl. Mekh. Tekh. Fiz.
\yr 2000
\vol 41
\issue 3
\pages 139--148
\mathnet{http://mi.mathnet.ru/pmtf2937}
\elib{https://elibrary.ru/item.asp?id=17261909}
\transl
\jour J. Appl. Mech. Tech. Phys.
\yr 2000
\vol 41
\issue 3
\pages 504--512
\crossref{https://doi.org/10.1007/BF02465303}
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  • https://www.mathnet.ru/eng/pmtf/v41/i3/p139
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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