Abstract:
Stationary hydrodynamic and temperature fields near the upper triple point of the floating-zone melting process are analyzed. Regularities determining the angular position and shape of the initial melted area as functions of thermal conditions on solid and liquid surfaces in the immediate vicinity of the triple point are established in the form of four analytical relations.
Citation:
V. I. Yakovlev, “Boundaries of the initial melted area of a semiconductor film formed by floating-zone melting”, Prikl. Mekh. Tekh. Fiz., 41:3 (2000), 139–148; J. Appl. Mech. Tech. Phys., 41:3 (2000), 504–512