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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 11, Issue 18, Pages 1114–1118 (Mi pjtf995)  

Low-dose effect and degradation stability of $In_x\,Ga_{1-x}\,As:Si$ light-radiating diodes

T. V. Torchinskaya, G. N. Semenova, T. G. Berdinskikh

Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
Received: 25.06.1985
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. V. Torchinskaya, G. N. Semenova, T. G. Berdinskikh, “Low-dose effect and degradation stability of $In_x\,Ga_{1-x}\,As:Si$ light-radiating diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985), 1114–1118
Citation in format AMSBIB
\Bibitem{TorSemBer85}
\by T.~V.~Torchinskaya, G.~N.~Semenova, T.~G.~Berdinskikh
\paper Low-dose effect and degradation stability of $In_x\,Ga_{1-x}\,As:Si$ light-radiating diodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 11
\issue 18
\pages 1114--1118
\mathnet{http://mi.mathnet.ru/pjtf995}
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  • https://www.mathnet.ru/eng/pjtf/v11/i18/p1114
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