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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 11, Issue 6, Pages 368–371 (Mi pjtf820)  
Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect

E. N. Arutunov, A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (403 kB)
Received: 22.11.1984
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. N. Arutunov, A. N. Vasil'ev, S. Yu. Karpov, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov, “Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 368–371
Citation in format AMSBIB
\Bibitem{AruVasKar85}
\by E.~N.~Arutunov, A.~N.~Vasil'ev, S.~Yu.~Karpov, Yu.~V.~Koval'chuk, V.~E.~Myachin, I.~A.~Sokolov
\paper Photoluminescence of ion-implanted $Ga\,As$ after the nanosecond laser effect
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 11
\issue 6
\pages 368--371
\mathnet{http://mi.mathnet.ru/pjtf820}
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