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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 11, Issue 3, Pages 177–181 (Mi pjtf772)  
Mechanism of athermal crystallization during pulsive silicon annealing

A. M. Pristrem, A. V. Demchuka, N. I. Danilovicha

a Minsk Institute of Radio Technology
Full-text PDF (1464 kB)
Received: 19.09.1984
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Pristrem, A. V. Demchuk, N. I. Danilovich, “Mechanism of athermal crystallization during pulsive silicon annealing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:3 (1985), 177–181
Citation in format AMSBIB
\Bibitem{PriDemDan85}
\by A.~M.~Pristrem, A.~V.~Demchuk, N.~I.~Danilovich
\paper Mechanism of athermal crystallization during pulsive silicon annealing
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 11
\issue 3
\pages 177--181
\mathnet{http://mi.mathnet.ru/pjtf772}
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  • https://www.mathnet.ru/eng/pjtf/v11/i3/p177
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