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Pisma v Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 11, Issue 1, Pages 41–46 (Mi pjtf739)  
Defect accumulation effect on the semiconductor surface as a result of their drifts in the field of near-surface zone bendings

A. P. Akhoyan, N. E. Korsunskaya, N. V. Markevich

Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
Full-text PDF (578 kB)
Received: 12.07.1984
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Akhoyan, N. E. Korsunskaya, N. V. Markevich, “Defect accumulation effect on the semiconductor surface as a result of their drifts in the field of near-surface zone bendings”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 41–46
Citation in format AMSBIB
\Bibitem{AkhKorMar85}
\by A.~P.~Akhoyan, N.~E.~Korsunskaya, N.~V.~Markevich
\paper Defect accumulation effect on the semiconductor surface as a result of their drifts in the field of near-surface zone bendings
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 11
\issue 1
\pages 41--46
\mathnet{http://mi.mathnet.ru/pjtf739}
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  • https://www.mathnet.ru/eng/pjtf/v11/i1/p41
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